UMX3N Transistor Datasheet & Specifications
NPN
SOT-363
General Purpose
JSCJ
VCEO
50V
Ic Max
150mA
Pd Max
150mW
hFE Gain
120
Quick Reference
The UMX3N is a NPN bipolar transistor in a SOT-363 package by JSCJ. This datasheet provides complete specifications including 50V breakdown voltage and 150mA continuous collector current. Download the UMX3N datasheet PDF above for detailed pinout diagrams and application circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | JSCJ | Original Manufacturer |
| Package | SOT-363 | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| VCEO | 50V | Breakdown voltage |
| Ic | 150mA | Collector current |
| Pd | 150mW | Power dissipation |
| DC Current Gain | 120 | hFE / Beta |
| Frequency | 180MHz | Transition speed (fT) |
| VCEsat | 400mV | Saturation voltage |
| Vebo | 7V | Emitter-Base voltage |
| Cutoff Current | 100nA | Leakage (ICBO) |
| Temp | -55℃~+150℃ | Operating temp |
Equivalent Transistors & Alternatives
| Part | Type | Package | VCEO | Ic | Pd |
|---|---|---|---|---|---|
| MMDT5551(RANGE:100-300) | NPN | SOT-363 | 160V | 200mA | 200mW |
| MMDT5551 | NPN | SOT-363 | 160V | 200mA | 200mW |
| MMDT5551 | NPN | SOT-363 | 160V | 200mA | 200mW |
| UMX1N | NPN | SOT-363 | 50V | 150mA | 200mW |
| MMDT5551DW | NPN | SOT-363 | 160V | 200mA | 200mW |
| UMX1N(RANGE:120-560) | NPN | SOT-363 | 50V | 150mA | 150mW |
| JTDMMDT5551 | NPN | SOT-363 | 160V | 200mA | 200mW |
| MMDT5551-JSM | NPN | SOT-363 | 160V | 200mA | 200mW |
| MMDT5551 | NPN | SOT-363 | 160V | 200mA | 200mW |
| MMDT5551 | NPN | SOT-363 | 160V | 200mA | 200mW |