MMDT5551-JSM Transistor Datasheet & Specifications
NPN
SOT-363
General Purpose
JSMSEMI
VCEO
160V
Ic Max
200mA
Pd Max
200mW
hFE Gain
300
Quick Reference
The MMDT5551-JSM is a NPN bipolar transistor in a SOT-363 package by JSMSEMI. This datasheet provides complete specifications including 160V breakdown voltage and 200mA continuous collector current. Download the MMDT5551-JSM datasheet PDF above for detailed pinout diagrams and application circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | JSMSEMI | Original Manufacturer |
| Package | SOT-363 | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| VCEO | 160V | Breakdown voltage |
| Ic | 200mA | Collector current |
| Pd | 200mW | Power dissipation |
| DC Current Gain | 300 | hFE / Beta |
| Frequency | 300MHz | Transition speed (fT) |
| VCEsat | 200mV | Saturation voltage |
| Vebo | 6V | Emitter-Base voltage |
| Cutoff Current | 50nA | Leakage (ICBO) |
| Temp | - | Operating temp |
Equivalent Transistors & Alternatives
| Part | Type | Package | VCEO | Ic | Pd |
|---|---|---|---|---|---|
| MMDT5551(RANGE:100-300) | NPN | SOT-363 | 160V | 200mA | 200mW |
| MMDT5551 | NPN | SOT-363 | 160V | 200mA | 200mW |
| MMDT5551 | NPN | SOT-363 | 160V | 200mA | 200mW |
| MMDT5551DW | NPN | SOT-363 | 160V | 200mA | 200mW |
| JTDMMDT5551 | NPN | SOT-363 | 160V | 200mA | 200mW |
| MMDT5551 | NPN | SOT-363 | 160V | 200mA | 200mW |
| MMDT5551 | NPN | SOT-363 | 160V | 200mA | 200mW |
| MMBT5551DW | NPN | SOT-363 | 160V | 600mA | 500mW |
| MMDT5551 | NPN | SOT-363 | 160V | 200mA | 200mW |
| HMMDT55517F | NPN | SOT-363 | 160V | 200mA | 200mW |