HMMDT55517F Transistor Datasheet & Specifications
NPN
SOT-363
General Purpose
HXY MOSFET
VCEO
160V
Ic Max
200mA
Pd Max
200mW
hFE Gain
100
Quick Reference
The HMMDT55517F is a NPN bipolar transistor in a SOT-363 package by HXY MOSFET. This datasheet provides complete specifications including 160V breakdown voltage and 200mA continuous collector current. Download the HMMDT55517F datasheet PDF above for detailed pinout diagrams and application circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | HXY MOSFET | Original Manufacturer |
| Package | SOT-363 | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| VCEO | 160V | Breakdown voltage |
| Ic | 200mA | Collector current |
| Pd | 200mW | Power dissipation |
| DC Current Gain | 100 | hFE / Beta |
| Frequency | 300MHz | Transition speed (fT) |
| VCEsat | - | Saturation voltage |
| Vebo | - | Emitter-Base voltage |
| Cutoff Current | - | Leakage (ICBO) |
| Temp | -55℃~+150℃ | Operating temp |
Equivalent Transistors & Alternatives
| Part | Type | Package | VCEO | Ic | Pd |
|---|---|---|---|---|---|
| MMDT5551(RANGE:100-300) | NPN | SOT-363 | 160V | 200mA | 200mW |
| MMDT5551 | NPN | SOT-363 | 160V | 200mA | 200mW |
| MMDT5551 | NPN | SOT-363 | 160V | 200mA | 200mW |
| MMDT5551DW | NPN | SOT-363 | 160V | 200mA | 200mW |
| JTDMMDT5551 | NPN | SOT-363 | 160V | 200mA | 200mW |
| MMDT5551-JSM | NPN | SOT-363 | 160V | 200mA | 200mW |
| MMDT5551 | NPN | SOT-363 | 160V | 200mA | 200mW |
| MMDT5551 | NPN | SOT-363 | 160V | 200mA | 200mW |
| MMBT5551DW | NPN | SOT-363 | 160V | 600mA | 500mW |
| MMDT5551 | NPN | SOT-363 | 160V | 200mA | 200mW |