MMBT5551DW Transistor Datasheet & Specifications
NPN
SOT-363
General Purpose
Shikues
VCEO
160V
Ic Max
600mA
Pd Max
500mW
hFE Gain
300
Quick Reference
The MMBT5551DW is a NPN bipolar transistor in a SOT-363 package by Shikues. This datasheet provides complete specifications including 160V breakdown voltage and 600mA continuous collector current. Download the MMBT5551DW datasheet PDF above for detailed pinout diagrams and application circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | Shikues | Original Manufacturer |
| Package | SOT-363 | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| VCEO | 160V | Breakdown voltage |
| Ic | 600mA | Collector current |
| Pd | 500mW | Power dissipation |
| DC Current Gain | 300 | hFE / Beta |
| Frequency | 110MHz | Transition speed (fT) |
| VCEsat | - | Saturation voltage |
| Vebo | - | Emitter-Base voltage |
| Cutoff Current | - | Leakage (ICBO) |
| Temp | -55℃~+150℃ | Operating temp |