UMX1N(RANGE:120-560) Transistor Datasheet & Specifications
NPN
SOT-363
General Purpose
JSCJ
VCEO
50V
Ic Max
150mA
Pd Max
150mW
hFE Gain
120
Quick Reference
The UMX1N(RANGE:120-560) is a NPN bipolar transistor in a SOT-363 package by JSCJ. This datasheet provides complete specifications including 50V breakdown voltage and 150mA continuous collector current. Download the UMX1N(RANGE:120-560) datasheet PDF above for detailed pinout diagrams and application circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | JSCJ | Original Manufacturer |
| Package | SOT-363 | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| VCEO | 50V | Breakdown voltage |
| Ic | 150mA | Collector current |
| Pd | 150mW | Power dissipation |
| DC Current Gain | 120 | hFE / Beta |
| Frequency | 180MHz | Transition speed (fT) |
| VCEsat | 400mV | Saturation voltage |
| Vebo | 7V | Emitter-Base voltage |
| Cutoff Current | 100nA | Leakage (ICBO) |
| Temp | - | Operating temp |
Equivalent Transistors & Alternatives
| Part | Type | Package | VCEO | Ic | Pd |
|---|---|---|---|---|---|
| MMDT5551(RANGE:100-300) | NPN | SOT-363 | 160V | 200mA | 200mW |
| MMDT5551 | NPN | SOT-363 | 160V | 200mA | 200mW |
| MMDT5551 | NPN | SOT-363 | 160V | 200mA | 200mW |
| UMX3N | NPN | SOT-363 | 50V | 150mA | 150mW |
| UMX1N | NPN | SOT-363 | 50V | 150mA | 200mW |
| MMDT5551DW | NPN | SOT-363 | 160V | 200mA | 200mW |
| JTDMMDT5551 | NPN | SOT-363 | 160V | 200mA | 200mW |
| MMDT5551-JSM | NPN | SOT-363 | 160V | 200mA | 200mW |
| MMDT5551 | NPN | SOT-363 | 160V | 200mA | 200mW |
| MMDT5551 | NPN | SOT-363 | 160V | 200mA | 200mW |