UMT1N Transistor Datasheet & Specifications
PNP
SOT-363
General Purpose
YANGJIE
VCEO
50V
Ic Max
150mA
Pd Max
200mW
hFE Gain
120
Quick Reference
The UMT1N is a PNP bipolar transistor in a SOT-363 package by YANGJIE. This datasheet provides complete specifications including 50V breakdown voltage and 150mA continuous collector current. Download the UMT1N datasheet PDF above for detailed pinout diagrams and application circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | YANGJIE | Original Manufacturer |
| Package | SOT-363 | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| VCEO | 50V | Breakdown voltage |
| Ic | 150mA | Collector current |
| Pd | 200mW | Power dissipation |
| DC Current Gain | 120 | hFE / Beta |
| Frequency | 140MHz | Transition speed (fT) |
| VCEsat | - | Saturation voltage |
| Vebo | - | Emitter-Base voltage |
| Cutoff Current | - | Leakage (ICBO) |
| Temp | -55℃~+150℃ | Operating temp |
Equivalent Transistors & Alternatives
| Part | Type | Package | VCEO | Ic | Pd |
|---|---|---|---|---|---|
| MMDT5401 | PNP | SOT-363 | 150V | 200mA | 200mW |
| TPMMDT5401 | PNP | SOT-363 | 150V | 200mA | 200mW |
| TPMMDT2907A | PNP | SOT-363 | 60V | 600mA | 200mW |
| MMDT5401DW | PNP | SOT-363 | 150V | 600mA | 300mW |
| MMDT5401 | PNP | SOT-363 | 150V | 600mA | 300mW |
| MMDT5401 | PNP | SOT-363 | 150V | 200mA | 200mW |
| MMDT5401 | PNP | SOT-363 | 150V | 200mA | 200mW |
| MMDT5401(RANGE:100-300) | PNP | SOT-363 | 150V | 200mA | 200mW |
| MMDT2907A | PNP | SOT-363 | 60V | 600mA | 200mW |
| HMMDT54017F | PNP | SOT-363 | 150V | 200mA | 200mW |