MMDT5401(RANGE:100-300) Transistor Datasheet & Specifications
PNP
SOT-363
General Purpose
JSCJ
VCEO
150V
Ic Max
200mA
Pd Max
200mW
hFE Gain
50
Quick Reference
The MMDT5401(RANGE:100-300) is a PNP bipolar transistor in a SOT-363 package by JSCJ. This datasheet provides complete specifications including 150V breakdown voltage and 200mA continuous collector current. Download the MMDT5401(RANGE:100-300) datasheet PDF above for detailed pinout diagrams and application circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | JSCJ | Original Manufacturer |
| Package | SOT-363 | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| VCEO | 150V | Breakdown voltage |
| Ic | 200mA | Collector current |
| Pd | 200mW | Power dissipation |
| DC Current Gain | 50 | hFE / Beta |
| Frequency | 100MHz | Transition speed (fT) |
| VCEsat | - | Saturation voltage |
| Vebo | - | Emitter-Base voltage |
| Cutoff Current | - | Leakage (ICBO) |
| Temp | -55℃~+150℃ | Operating temp |
Equivalent Transistors & Alternatives
| Part | Type | Package | VCEO | Ic | Pd |
|---|---|---|---|---|---|
| MMDT5401 | PNP | SOT-363 | 150V | 200mA | 200mW |
| TPMMDT5401 | PNP | SOT-363 | 150V | 200mA | 200mW |
| MMDT5401DW | PNP | SOT-363 | 150V | 600mA | 300mW |
| MMDT5401 | PNP | SOT-363 | 150V | 600mA | 300mW |
| MMDT5401 | PNP | SOT-363 | 150V | 200mA | 200mW |
| MMDT5401 | PNP | SOT-363 | 150V | 200mA | 200mW |
| HMMDT54017F | PNP | SOT-363 | 150V | 200mA | 200mW |
| MMDT5401 | PNP | SOT-363 | 150V | 600mA | 200mW |