TPBC848S Transistor Datasheet & Specifications
NPN
SOT-363
General Purpose
TECH PUBLIC
VCEO
30V
Ic Max
100mA
Pd Max
300mW
hFE Gain
200
Quick Reference
The TPBC848S is a NPN bipolar transistor in a SOT-363 package by TECH PUBLIC. This datasheet provides complete specifications including 30V breakdown voltage and 100mA continuous collector current. Download the TPBC848S datasheet PDF above for detailed pinout diagrams and application circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | TECH PUBLIC | Original Manufacturer |
| Package | SOT-363 | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| VCEO | 30V | Breakdown voltage |
| Ic | 100mA | Collector current |
| Pd | 300mW | Power dissipation |
| DC Current Gain | 200 | hFE / Beta |
| Frequency | 100MHz | Transition speed (fT) |
| VCEsat | 600mV | Saturation voltage |
| Vebo | 5V | Emitter-Base voltage |
| Cutoff Current | 5uA | Leakage (ICBO) |
| Temp | -55℃~+150℃ | Operating temp |
Equivalent Transistors & Alternatives
| Part | Type | Package | VCEO | Ic | Pd |
|---|---|---|---|---|---|
| MMDT5551(RANGE:100-300) | NPN | SOT-363 | 160V | 200mA | 200mW |
| DSS4240Y-7 | NPN | SOT-363 | 40V | 2A | 625mW |
| BC847BDW1T1G-GK | NPN | SOT-363 | 45V | 100mA | 200mW |
| MMDT2222A | NPN | SOT-363 | 40V | 600mA | 200mW |
| MMDT5551 | NPN | SOT-363 | 160V | 200mA | 200mW |
| HMMDT39047F | NPN | SOT-363 | 40V | 200mA | 200mW |
| BC847BDW1T1G-FS | NPN | SOT-363 | 45V | 100mA | 200mW |
| BCM847BS | NPN | SOT-363 | 45V | 100mA | 200mW |
| BC846BS | NPN | SOT-363 | 65V | 100mA | 200mW |
| BC847BSQ | NPN | SOT-363 | 45V | 100mA | 200mW |