MMDT2222A Transistor Datasheet & Specifications

NPN SOT-363 General Purpose JSCJ
VCEO
40V
Ic Max
600mA
Pd Max
200mW
hFE Gain
35

Quick Reference

The MMDT2222A is a NPN bipolar transistor in a SOT-363 package by JSCJ. This datasheet provides complete specifications including 40V breakdown voltage and 600mA continuous collector current. Download the MMDT2222A datasheet PDF above for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufacturerJSCJOriginal Manufacturer
PackageSOT-363Physical mounting
Transistor TypeBJTBipolar Junction Transistor
VCEO40VBreakdown voltage
Ic600mACollector current
Pd200mWPower dissipation
DC Current Gain35hFE / Beta
Frequency300MHzTransition speed (fT)
VCEsat1VSaturation voltage
Vebo6VEmitter-Base voltage
Cutoff Current10nALeakage (ICBO)
Temp-55โ„ƒ~+150โ„ƒOperating temp

Equivalent Transistors & Alternatives

PartTypePackageVCEOIcPd
DSS4240Y-7 NPN SOT-363 40V 2A 625mW
TPMMDT4401 NPN SOT-363 40V 600mA 200mW
MMDT4401 NPN SOT-363 40V 600mA 200mW
MMBT5551DW NPN SOT-363 160V 600mA 500mW
MMDT4401 NPN SOT-363 40V 600mA 200mW