MMDT4401 Transistor Datasheet & Specifications

NPN SOT-363 General Purpose YANGJIE
VCEO
40V
Ic Max
600mA
Pd Max
200mW
hFE Gain
20

Quick Reference

The MMDT4401 is a NPN bipolar transistor in a SOT-363 package by YANGJIE. This datasheet provides complete specifications including 40V breakdown voltage and 600mA continuous collector current. Download the MMDT4401 datasheet PDF above for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufacturerYANGJIEOriginal Manufacturer
PackageSOT-363Physical mounting
Transistor TypeBJTBipolar Junction Transistor
VCEO40VBreakdown voltage
Ic600mACollector current
Pd200mWPower dissipation
DC Current Gain20hFE / Beta
Frequency250MHzTransition speed (fT)
VCEsat750mVSaturation voltage
Vebo6VEmitter-Base voltage
Cutoff Current100nALeakage (ICBO)
Temp-55โ„ƒ~+150โ„ƒOperating temp

Equivalent Transistors & Alternatives

PartTypePackageVCEOIcPd
DSS4240Y-7 NPN SOT-363 40V 2A 625mW
MMDT2222A NPN SOT-363 40V 600mA 200mW
TPMMDT4401 NPN SOT-363 40V 600mA 200mW
MMBT5551DW NPN SOT-363 160V 600mA 500mW
MMDT4401 NPN SOT-363 40V 600mA 200mW