BC847BSQ Transistor Datasheet & Specifications
NPN
SOT-363
General Purpose
YANGJIE
VCEO
45V
Ic Max
100mA
Pd Max
200mW
hFE Gain
450
Quick Reference
The BC847BSQ is a NPN bipolar transistor in a SOT-363 package by YANGJIE. This datasheet provides complete specifications including 45V breakdown voltage and 100mA continuous collector current. Download the BC847BSQ datasheet PDF above for detailed pinout diagrams and application circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | YANGJIE | Original Manufacturer |
| Package | SOT-363 | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| VCEO | 45V | Breakdown voltage |
| Ic | 100mA | Collector current |
| Pd | 200mW | Power dissipation |
| DC Current Gain | 450 | hFE / Beta |
| Frequency | 150MHz | Transition speed (fT) |
| VCEsat | 650mV | Saturation voltage |
| Vebo | 6V | Emitter-Base voltage |
| Cutoff Current | 100nA | Leakage (ICBO) |
| Temp | -55℃~+150℃ | Operating temp |
Equivalent Transistors & Alternatives
| Part | Type | Package | VCEO | Ic | Pd |
|---|---|---|---|---|---|
| MMDT5551(RANGE:100-300) | NPN | SOT-363 | 160V | 200mA | 200mW |
| BC847BDW1T1G-GK | NPN | SOT-363 | 45V | 100mA | 200mW |
| MMDT5551 | NPN | SOT-363 | 160V | 200mA | 200mW |
| BC847BDW1T1G-FS | NPN | SOT-363 | 45V | 100mA | 200mW |
| BCM847BS | NPN | SOT-363 | 45V | 100mA | 200mW |
| BC846BS | NPN | SOT-363 | 65V | 100mA | 200mW |
| MMDT5551 | NPN | SOT-363 | 160V | 200mA | 200mW |
| TPBC847S | NPN | SOT-363 | 45V | 100mA | 300mW |
| BC847S | NPN | SOT-363 | 45V | 100mA | 200mW |
| BC847BS-JSM | NPN | SOT-363 | 45V | 100mA | 200mW |