BC847BS-JSM Transistor Datasheet & Specifications
NPN
SOT-363
General Purpose
JSMSEMI
VCEO
45V
Ic Max
100mA
Pd Max
200mW
hFE Gain
450
Quick Reference
The BC847BS-JSM is a NPN bipolar transistor in a SOT-363 package by JSMSEMI. This datasheet provides complete specifications including 45V breakdown voltage and 100mA continuous collector current. Download the BC847BS-JSM datasheet PDF above for detailed pinout diagrams and application circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | JSMSEMI | Original Manufacturer |
| Package | SOT-363 | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| VCEO | 45V | Breakdown voltage |
| Ic | 100mA | Collector current |
| Pd | 200mW | Power dissipation |
| DC Current Gain | 450 | hFE / Beta |
| Frequency | 200MHz | Transition speed (fT) |
| VCEsat | 650mV | Saturation voltage |
| Vebo | 6V | Emitter-Base voltage |
| Cutoff Current | 15nA | Leakage (ICBO) |
| Temp | -55℃~+150℃ | Operating temp |
Equivalent Transistors & Alternatives
| Part | Type | Package | VCEO | Ic | Pd |
|---|---|---|---|---|---|
| MMDT5551(RANGE:100-300) | NPN | SOT-363 | 160V | 200mA | 200mW |
| BC847BDW1T1G-GK | NPN | SOT-363 | 45V | 100mA | 200mW |
| MMDT5551 | NPN | SOT-363 | 160V | 200mA | 200mW |
| BC847BDW1T1G-FS | NPN | SOT-363 | 45V | 100mA | 200mW |
| BCM847BS | NPN | SOT-363 | 45V | 100mA | 200mW |
| BC846BS | NPN | SOT-363 | 65V | 100mA | 200mW |
| BC847BSQ | NPN | SOT-363 | 45V | 100mA | 200mW |
| MMDT5551 | NPN | SOT-363 | 160V | 200mA | 200mW |
| TPBC847S | NPN | SOT-363 | 45V | 100mA | 300mW |
| BC847S | NPN | SOT-363 | 45V | 100mA | 200mW |