TIP50G Transistor Datasheet & Specifications

NPN TO-220AB High Power onsemi
VCEO
400V
Ic Max
1A
Pd Max
40W
hFE Gain
10

Quick Reference

The TIP50G is a NPN bipolar transistor in a TO-220AB package by onsemi. This datasheet provides complete specifications including 400V breakdown voltage and 1A continuous collector current. Download the TIP50G datasheet PDF above for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufactureronsemiOriginal Manufacturer
PackageTO-220ABPhysical mounting
Transistor TypeBJTBipolar Junction Transistor
VCEO400VBreakdown voltage
Ic1ACollector current
Pd40WPower dissipation
DC Current Gain10hFE / Beta
Frequency10MHzTransition speed (fT)
VCEsat1VSaturation voltage
Vebo5VEmitter-Base voltage
Cutoff Current1mALeakage (ICBO)
Temp-65โ„ƒ~+150โ„ƒOperating temp

Equivalent Transistors & Alternatives

PartTypePackageVCEOIcPd
3DD13007 NPN TO-220AB 400V 8A 2W
YFW13009AT NPN TO-220AB 400V 12A 3W
YFW13003AT NPN TO-220AB 400V 1.5A 1.5W
YFW13007AT NPN TO-220AB 400V 8A 2W
YFW13005AT NPN TO-220AB 400V 4A 2W
13009 NPN TO-220AB 410V 12A 80W