13009 Transistor Datasheet & Specifications
NPN
TO-220AB
High Power
GOODWORK
VCEO
410V
Ic Max
12A
Pd Max
80W
hFE Gain
35
Quick Reference
The 13009 is a NPN bipolar transistor in a TO-220AB package by GOODWORK. This datasheet provides complete specifications including 410V breakdown voltage and 12A continuous collector current. Download the 13009 datasheet PDF above for detailed pinout diagrams and application circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | GOODWORK | Original Manufacturer |
| Package | TO-220AB | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| VCEO | 410V | Breakdown voltage |
| Ic | 12A | Collector current |
| Pd | 80W | Power dissipation |
| DC Current Gain | 35 | hFE / Beta |
| Frequency | 4MHz | Transition speed (fT) |
| VCEsat | - | Saturation voltage |
| Vebo | - | Emitter-Base voltage |
| Cutoff Current | - | Leakage (ICBO) |
| Temp | -55โ~+150โ | Operating temp |