YFW13009AT Transistor Datasheet & Specifications
NPN
TO-220AB
High Power
YFW
VCEO
400V
Ic Max
12A
Pd Max
3W
hFE Gain
40
Quick Reference
The YFW13009AT is a NPN bipolar transistor in a TO-220AB package by YFW. This datasheet provides complete specifications including 400V breakdown voltage and 12A continuous collector current. Download the YFW13009AT datasheet PDF above for detailed pinout diagrams and application circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | YFW | Original Manufacturer |
| Package | TO-220AB | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| VCEO | 400V | Breakdown voltage |
| Ic | 12A | Collector current |
| Pd | 3W | Power dissipation |
| DC Current Gain | 40 | hFE / Beta |
| Frequency | 4MHz | Transition speed (fT) |
| VCEsat | 1V | Saturation voltage |
| Vebo | 9V | Emitter-Base voltage |
| Cutoff Current | 100uA | Leakage (ICBO) |
| Temp | - | Operating temp |
Equivalent Transistors & Alternatives
| Part | Type | Package | VCEO | Ic | Pd |
|---|---|---|---|---|---|
| 13009 | NPN | TO-220AB | 410V | 12A | 80W |