TIP111G Transistor Datasheet & Specifications

NPN TO-220 General Purpose onsemi
VCEO
80V
Ic Max
2A
Pd Max
2W
hFE Gain
1000

Quick Reference

The TIP111G is a NPN bipolar transistor in a TO-220 package by onsemi. This datasheet provides complete specifications including 80V breakdown voltage and 2A continuous collector current. Download the TIP111G datasheet PDF above for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufactureronsemiOriginal Manufacturer
PackageTO-220Physical mounting
Transistor TypeBJTBipolar Junction Transistor
VCEO80VBreakdown voltage
Ic2ACollector current
Pd2WPower dissipation
DC Current Gain1000hFE / Beta
Frequency-Transition speed (fT)
VCEsat2.5VSaturation voltage
Vebo-Emitter-Base voltage
Cutoff Current1mALeakage (ICBO)
Temp-65โ„ƒ~+150โ„ƒ@(Tj)Operating temp

Equivalent Transistors & Alternatives

PartTypePackageVCEOIcPd
MJE15034G NPN TO-220 350V 4A 50W
MJE13007G NPN TO-220 400V 8A 80W
D44H11G NPN TO-220 80V 10A 70W
MJE13009-2 NPN TO-220 400V 12A 100W
KSE13007H2SMTU-HXY NPN TO-220 400V 8A 80W
TIP41C NPN TO-220 100V 6A 2W
TIP41CG NPN TO-220 100V 6A 65W
MJE15030G NPN TO-220 150V 8A 50W
D44H11 NPN TO-220 80V 10A 50W
TIP41C NPN TO-220 100V 6A 2W