SS8550DTA Transistor Datasheet & Specifications
PNP
TO-92-3
General Purpose
onsemi
VCEO
25V
Ic Max
1.5A
Pd Max
2W
hFE Gain
40
Quick Reference
The SS8550DTA is a PNP bipolar transistor in a TO-92-3 package by onsemi. This datasheet provides complete specifications including 25V breakdown voltage and 1.5A continuous collector current. Download the SS8550DTA datasheet PDF above for detailed pinout diagrams and application circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | onsemi | Original Manufacturer |
| Package | TO-92-3 | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| VCEO | 25V | Breakdown voltage |
| Ic | 1.5A | Collector current |
| Pd | 2W | Power dissipation |
| DC Current Gain | 40 | hFE / Beta |
| Frequency | 100MHz | Transition speed (fT) |
| VCEsat | - | Saturation voltage |
| Vebo | - | Emitter-Base voltage |
| Cutoff Current | - | Leakage (ICBO) |
| Temp | -65℃~+150℃ | Operating temp |
Equivalent Transistors & Alternatives
| Part | Type | Package | VCEO | Ic | Pd |
|---|---|---|---|---|---|
| SS8550-TA(RANGE:160-300) | PNP | TO-92-3 | 25V | 1.5A | 1W |
| ZTX751STZ | PNP | TO-92-3 | 60V | 2A | 1.5W |
| KTA1281-Y-AT/P | PNP | TO-92-3 | 50V | 2A | 1W |
| 2SA1020L-Y-T9N-B | PNP | TO-92-3 | 50V | 2A | 900mW |