ZTX751STZ Transistor Datasheet & Specifications
PNP
TO-92-3
General Purpose
DIODES
VCEO
60V
Ic Max
2A
Pd Max
1.5W
hFE Gain
80
Quick Reference
The ZTX751STZ is a PNP bipolar transistor in a TO-92-3 package by DIODES. This datasheet provides complete specifications including 60V breakdown voltage and 2A continuous collector current. Download the ZTX751STZ datasheet PDF above for detailed pinout diagrams and application circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | DIODES | Original Manufacturer |
| Package | TO-92-3 | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| VCEO | 60V | Breakdown voltage |
| Ic | 2A | Collector current |
| Pd | 1.5W | Power dissipation |
| DC Current Gain | 80 | hFE / Beta |
| Frequency | 140MHz | Transition speed (fT) |
| VCEsat | 300mV | Saturation voltage |
| Vebo | 7V | Emitter-Base voltage |
| Cutoff Current | 100nA | Leakage (ICBO) |
| Temp | -55℃~+200℃ | Operating temp |