2SA1020L-Y-T9N-B Transistor Datasheet & Specifications
PNP
TO-92-3
General Purpose
UTC
VCEO
50V
Ic Max
2A
Pd Max
900mW
hFE Gain
120
Quick Reference
The 2SA1020L-Y-T9N-B is a PNP bipolar transistor in a TO-92-3 package by UTC. This datasheet provides complete specifications including 50V breakdown voltage and 2A continuous collector current. Download the 2SA1020L-Y-T9N-B datasheet PDF above for detailed pinout diagrams and application circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | UTC | Original Manufacturer |
| Package | TO-92-3 | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| VCEO | 50V | Breakdown voltage |
| Ic | 2A | Collector current |
| Pd | 900mW | Power dissipation |
| DC Current Gain | 120 | hFE / Beta |
| Frequency | 100MHz | Transition speed (fT) |
| VCEsat | - | Saturation voltage |
| Vebo | - | Emitter-Base voltage |
| Cutoff Current | - | Leakage (ICBO) |
| Temp | -40℃~+150℃ | Operating temp |
Equivalent Transistors & Alternatives
| Part | Type | Package | VCEO | Ic | Pd |
|---|---|---|---|---|---|
| ZTX751STZ | PNP | TO-92-3 | 60V | 2A | 1.5W |
| KTA1281-Y-AT/P | PNP | TO-92-3 | 50V | 2A | 1W |