SPZT751T1G Transistor Datasheet & Specifications

PNP SOT-223 General Purpose onsemi
VCEO
60V
Ic Max
2A
Pd Max
800mW
hFE Gain
75

Quick Reference

The SPZT751T1G is a PNP bipolar transistor in a SOT-223 package by onsemi. This datasheet provides complete specifications including 60V breakdown voltage and 2A continuous collector current. Download the SPZT751T1G datasheet PDF above for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufactureronsemiOriginal Manufacturer
PackageSOT-223Physical mounting
Transistor TypeBJTBipolar Junction Transistor
VCEO60VBreakdown voltage
Ic2ACollector current
Pd800mWPower dissipation
DC Current Gain75hFE / Beta
Frequency75MHzTransition speed (fT)
VCEsat500mVSaturation voltage
Vebo5VEmitter-Base voltage
Cutoff Current100nALeakage (ICBO)
Temp-65โ„ƒ~+150โ„ƒOperating temp

Equivalent Transistors & Alternatives

PartTypePackageVCEOIcPd
FZT951QTA PNP SOT-223 60V 5A 3W
ZX5T951GTA PNP SOT-223 60V 5.5A 3W
FZT955TA PNP SOT-223 140V 4A 3W
ZXTP2014GTA PNP SOT-223 140V 4A 3W
FZT792ATA PNP SOT-223 70V 2A 3W
STN951 PNP SOT-223 60V 5A 1.6W
FZT956TA PNP SOT-223 200V 2A 3W
DSS60600MZ4-13 PNP SOT-223 60V 6A 2W
ZX5T1951GTA PNP SOT-223 60V 6A 3W
ZX5T955GTA PNP SOT-223 140V 4A 3W