S9013-E Transistor Datasheet & Specifications
NPN
SOT-23
General Purpose
MDD(Microdiode Semiconductor)
VCEO
25V
Ic Max
500mA
Pd Max
300mW
hFE Gain
400
Quick Reference
The S9013-E is a NPN bipolar transistor in a SOT-23 package by MDD(Microdiode Semiconductor). This datasheet provides complete specifications including 25V breakdown voltage and 500mA continuous collector current. Download the S9013-E datasheet PDF above for detailed pinout diagrams and application circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | MDD(Microdiode Semiconductor) | Original Manufacturer |
| Package | SOT-23 | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| VCEO | 25V | Breakdown voltage |
| Ic | 500mA | Collector current |
| Pd | 300mW | Power dissipation |
| DC Current Gain | 400 | hFE / Beta |
| Frequency | 150MHz | Transition speed (fT) |
| VCEsat | 800mV | Saturation voltage |
| Vebo | 5V | Emitter-Base voltage |
| Cutoff Current | 100nA | Leakage (ICBO) |
| Temp | -55℃~+150℃ | Operating temp |
Equivalent Transistors & Alternatives
| Part | Type | Package | VCEO | Ic | Pd |
|---|---|---|---|---|---|
| MMBTA05(RANGE:100-400) | NPN | SOT-23 | 60V | 500mA | 300mW |
| ZXTN2020FTA | NPN | SOT-23 | 100V | 4A | 1.2W |
| FMMT491ATA | NPN | SOT-23 | 40V | 1A | 500mW |
| BC817-16LT1G | NPN | SOT-23 | 45V | 500mA | 225mW |
| BC817-40LT1G | NPN | SOT-23 | 45V | 500mA | 225mW |
| DN350T05-7 | NPN | SOT-23 | 350V | 500mA | 300mW |
| DNBT8105-7 | NPN | SOT-23 | 60V | 1A | 600mW |
| SS8050 | NPN | SOT-23 | 25V | 1.5A | 300mW |
| MMBTA42 | NPN | SOT-23 | 200V | 500mA | 350mW |
| ZXTN2040FTA | NPN | SOT-23 | 40V | 1A | 310mW |