S-LMBT5401LT1G Transistor Datasheet & Specifications

PNP SOT-23 General Purpose LRC
VCEO
150V
Ic Max
500mA
Pd Max
300mW
hFE Gain
240

Quick Reference

The S-LMBT5401LT1G is a PNP bipolar transistor in a SOT-23 package by LRC. This datasheet provides complete specifications including 150V breakdown voltage and 500mA continuous collector current. Download the S-LMBT5401LT1G datasheet PDF above for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufacturerLRCOriginal Manufacturer
PackageSOT-23Physical mounting
Transistor TypeBJTBipolar Junction Transistor
VCEO150VBreakdown voltage
Ic500mACollector current
Pd300mWPower dissipation
DC Current Gain240hFE / Beta
Frequency300MHzTransition speed (fT)
VCEsat-Saturation voltage
Vebo-Emitter-Base voltage
Cutoff Current-Leakage (ICBO)
Temp-55โ„ƒ~+150โ„ƒOperating temp

Equivalent Transistors & Alternatives

PartTypePackageVCEOIcPd
MMBTA92 PNP SOT-23 300V 500mA 300mW
MMBT5401 PNP SOT-23 150V 500mA 225mW
MMBT5401 PNP SOT-23 150V 600mA 300mW
NSVMMBT5401LT3G PNP SOT-23 150V 500mA 300mW
MMBT5401-7-F PNP SOT-23 150V 600mA 310mW
MMBTA92-7-F PNP SOT-23 300V 500mA 300mW
MMBT5401(RANGE:200-300) PNP SOT-23 150V 600mA 300mW
MMBT5401-TP PNP SOT-23 150V 600mA 300mW
MMBT5401LT1G PNP SOT-23 150V 500mA 300mW
MMBT5401 PNP SOT-23 160V 600mA 300mW