NSVMMBT5401LT3G Transistor Datasheet & Specifications

PNP SOT-23 General Purpose onsemi
VCEO
150V
Ic Max
500mA
Pd Max
300mW
hFE Gain
50

Quick Reference

The NSVMMBT5401LT3G is a PNP bipolar transistor in a SOT-23 package by onsemi. This datasheet provides complete specifications including 150V breakdown voltage and 500mA continuous collector current. Download the NSVMMBT5401LT3G datasheet PDF above for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufactureronsemiOriginal Manufacturer
PackageSOT-23Physical mounting
Transistor TypeBJTBipolar Junction Transistor
VCEO150VBreakdown voltage
Ic500mACollector current
Pd300mWPower dissipation
DC Current Gain50hFE / Beta
Frequency100MHzTransition speed (fT)
VCEsat500mVSaturation voltage
Vebo5VEmitter-Base voltage
Cutoff Current50nALeakage (ICBO)
Temp-55โ„ƒ~+150โ„ƒOperating temp

Equivalent Transistors & Alternatives

PartTypePackageVCEOIcPd
MMBTA92 PNP SOT-23 300V 500mA 300mW
MMBT5401 PNP SOT-23 150V 500mA 225mW
MMBT5401 PNP SOT-23 150V 600mA 300mW
MMBT5401-7-F PNP SOT-23 150V 600mA 310mW
MMBTA92-7-F PNP SOT-23 300V 500mA 300mW
MMBT5401(RANGE:200-300) PNP SOT-23 150V 600mA 300mW
MMBT5401-TP PNP SOT-23 150V 600mA 300mW
MMBT5401LT1G PNP SOT-23 150V 500mA 300mW
MMBT5401 PNP SOT-23 160V 600mA 300mW
MMBT5401 PNP SOT-23 150V 600mA 300mW