PZT2907AT1G Transistor Datasheet & Specifications

PNP SOT-223 General Purpose onsemi
VCEO
60V
Ic Max
600mA
Pd Max
1.5W
hFE Gain
75

Quick Reference

The PZT2907AT1G is a PNP bipolar transistor in a SOT-223 package by onsemi. This datasheet provides complete specifications including 60V breakdown voltage and 600mA continuous collector current. Download the PZT2907AT1G datasheet PDF above for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufactureronsemiOriginal Manufacturer
PackageSOT-223Physical mounting
Transistor TypeBJTBipolar Junction Transistor
VCEO60VBreakdown voltage
Ic600mACollector current
Pd1.5WPower dissipation
DC Current Gain75hFE / Beta
Frequency200MHzTransition speed (fT)
VCEsat400mVSaturation voltage
Vebo5VEmitter-Base voltage
Cutoff Current10nALeakage (ICBO)
Temp-65โ„ƒ~+150โ„ƒOperating temp

Equivalent Transistors & Alternatives

PartTypePackageVCEOIcPd
FZT951QTA PNP SOT-223 60V 5A 3W
ZX5T951GTA PNP SOT-223 60V 5.5A 3W
FZT955TA PNP SOT-223 140V 4A 3W
ZXTP2014GTA PNP SOT-223 140V 4A 3W
FZT792ATA PNP SOT-223 70V 2A 3W
STN951 PNP SOT-223 60V 5A 1.6W
BCP53T1G PNP SOT-223 80V 1.5A 1.5W
FZT956TA PNP SOT-223 200V 2A 3W
BCP53-16 PNP SOT-223 80V 1A 1.5W
DZT2907A-13 PNP SOT-223 60V 600mA 1W