PBSS4350T-HXY Transistor Datasheet & Specifications

NPN SOT-23 General Purpose HXY MOSFET
VCEO
50V
Ic Max
2A
Pd Max
350mW
hFE Gain
300

Quick Reference

The PBSS4350T-HXY is a NPN bipolar transistor in a SOT-23 package by HXY MOSFET. This datasheet provides complete specifications including 50V breakdown voltage and 2A continuous collector current. Download the PBSS4350T-HXY datasheet PDF above for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufacturerHXY MOSFETOriginal Manufacturer
PackageSOT-23Physical mounting
Transistor TypeBJTBipolar Junction Transistor
VCEO50VBreakdown voltage
Ic2ACollector current
Pd350mWPower dissipation
DC Current Gain300hFE / Beta
Frequency100MHzTransition speed (fT)
VCEsat-Saturation voltage
Vebo-Emitter-Base voltage
Cutoff Current-Leakage (ICBO)
Temp-55โ„ƒ~+150โ„ƒOperating temp

Equivalent Transistors & Alternatives

PartTypePackageVCEOIcPd
ZXTN2020FTA NPN SOT-23 100V 4A 1.2W
PBSS4350T,215 NPN SOT-23 50V 2A 300mW
ZXTN25100DFHTA NPN SOT-23 100V 2.5A 1.25W
NSS1C201LT1G NPN SOT-23 100V 2A 710mW
FMMT619TA NPN SOT-23 50V 2A 625mW
ZXTN2018FTA NPN SOT-23 60V 5A 1.56W
ZXTN25050DFHTA NPN SOT-23 50V 4A 1.25W
FMMT619 NPN SOT-23 50V 2A 250mW
DSS4240T-7-HXY NPN SOT-23 50V 2A 625mW
FMMT4240-HXY NPN SOT-23 50V 2A 350mW