MMDT3904 Transistor Datasheet & Specifications
NPN
SOT-363
General Purpose
MDD(Microdiode Semiconductor)
VCEO
40V
Ic Max
200mA
Pd Max
200mW
hFE Gain
300
Quick Reference
The MMDT3904 is a NPN bipolar transistor in a SOT-363 package by MDD(Microdiode Semiconductor). This datasheet provides complete specifications including 40V breakdown voltage and 200mA continuous collector current. Download the MMDT3904 datasheet PDF above for detailed pinout diagrams and application circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | MDD(Microdiode Semiconductor) | Original Manufacturer |
| Package | SOT-363 | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| VCEO | 40V | Breakdown voltage |
| Ic | 200mA | Collector current |
| Pd | 200mW | Power dissipation |
| DC Current Gain | 300 | hFE / Beta |
| Frequency | 300MHz | Transition speed (fT) |
| VCEsat | 300mV | Saturation voltage |
| Vebo | 5V | Emitter-Base voltage |
| Cutoff Current | 50nA | Leakage (ICBO) |
| Temp | - | Operating temp |
Equivalent Transistors & Alternatives
| Part | Type | Package | VCEO | Ic | Pd |
|---|---|---|---|---|---|
| MMDT5551(RANGE:100-300) | NPN | SOT-363 | 160V | 200mA | 200mW |
| DSS4240Y-7 | NPN | SOT-363 | 40V | 2A | 625mW |
| MMDT2222A | NPN | SOT-363 | 40V | 600mA | 200mW |
| MMDT5551 | NPN | SOT-363 | 160V | 200mA | 200mW |
| HMMDT39047F | NPN | SOT-363 | 40V | 200mA | 200mW |
| MMDT5551 | NPN | SOT-363 | 160V | 200mA | 200mW |
| TPMMDT4401 | NPN | SOT-363 | 40V | 600mA | 200mW |
| MMDT3904 | NPN | SOT-363 | 40V | 200mA | 200mW |
| MMDT3904 | NPN | SOT-363 | 40V | 200mA | 200mW |
| MMDT4401 | NPN | SOT-363 | 40V | 600mA | 200mW |