MMDT2227 Transistor Datasheet & Specifications

PNP SOT-363 General Purpose GOODWORK
VCEO
40V
Ic Max
600mA
Pd Max
200mW
hFE Gain
-

Quick Reference

The MMDT2227 is a PNP bipolar transistor in a SOT-363 package by GOODWORK. This datasheet provides complete specifications including 40V breakdown voltage and 600mA continuous collector current. Download the MMDT2227 datasheet PDF above for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufacturerGOODWORKOriginal Manufacturer
PackageSOT-363Physical mounting
Transistor TypeBJTBipolar Junction Transistor
VCEO40VBreakdown voltage
Ic600mACollector current
Pd200mWPower dissipation
DC Current Gain-hFE / Beta
Frequency300MHzTransition speed (fT)
VCEsat35@100µA,10VSaturation voltage
Vebo-Emitter-Base voltage
Cutoff Current-Leakage (ICBO)
Temp-55℃~+150℃@(Tj)Operating temp

Equivalent Transistors & Alternatives

PartTypePackageVCEOIcPd
TPMMDT2907A PNP SOT-363 60V 600mA 200mW
MMDT5401DW PNP SOT-363 150V 600mA 300mW
MMDT5401 PNP SOT-363 150V 600mA 300mW
MMDT2907A PNP SOT-363 60V 600mA 200mW
MMDT5401 PNP SOT-363 150V 600mA 200mW