MMBTSD123 Transistor Datasheet & Specifications

NPN SOT-23 General Purpose YFW
VCEO
15V
Ic Max
1A
Pd Max
200mW
hFE Gain
150

Quick Reference

The MMBTSD123 is a NPN bipolar transistor in a SOT-23 package by YFW. This datasheet provides complete specifications including 15V breakdown voltage and 1A continuous collector current. Download the MMBTSD123 datasheet PDF above for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufacturerYFWOriginal Manufacturer
PackageSOT-23Physical mounting
Transistor TypeBJTBipolar Junction Transistor
VCEO15VBreakdown voltage
Ic1ACollector current
Pd200mWPower dissipation
DC Current Gain150hFE / Beta
Frequency260MHzTransition speed (fT)
VCEsat-Saturation voltage
Vebo-Emitter-Base voltage
Cutoff Current-Leakage (ICBO)
Temp-55โ„ƒ~+150โ„ƒOperating temp

Equivalent Transistors & Alternatives

PartTypePackageVCEOIcPd
ZXTN2020FTA NPN SOT-23 100V 4A 1.2W
FMMT491ATA NPN SOT-23 40V 1A 500mW
DNBT8105-7 NPN SOT-23 60V 1A 600mW
SS8050 NPN SOT-23 25V 1.5A 300mW
ZXTN2040FTA NPN SOT-23 40V 1A 310mW
FMMT493ATA NPN SOT-23 60V 1A 500mW
PBSS4350T,215 NPN SOT-23 50V 2A 300mW
NSS40201LT1G NPN SOT-23 40V 2A 460mW
NSS20201LT1G NPN SOT-23 20V 2A 540mW
FMMT491TA NPN SOT-23 60V 1A 500mW