MMBTH10 Transistor Datasheet & Specifications

NPN SOT-23 General Purpose BORN
VCEO
20V
Ic Max
50mA
Pd Max
200mW
hFE Gain
200

Quick Reference

The MMBTH10 is a NPN bipolar transistor in a SOT-23 package by BORN. This datasheet provides complete specifications including 20V breakdown voltage and 50mA continuous collector current. Download the MMBTH10 datasheet PDF above for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufacturerBORNOriginal Manufacturer
PackageSOT-23Physical mounting
Transistor TypeBJTBipolar Junction Transistor
VCEO20VBreakdown voltage
Ic50mACollector current
Pd200mWPower dissipation
DC Current Gain200hFE / Beta
Frequency650MHzTransition speed (fT)
VCEsat500mVSaturation voltage
Vebo3VEmitter-Base voltage
Cutoff Current100nALeakage (ICBO)
Temp-Operating temp

Equivalent Transistors & Alternatives

PartTypePackageVCEOIcPd
MMBTA05(RANGE:100-400) NPN SOT-23 60V 500mA 300mW
ZXTN2020FTA NPN SOT-23 100V 4A 1.2W
FMMT491ATA NPN SOT-23 40V 1A 500mW
BC817-16LT1G NPN SOT-23 45V 500mA 225mW
BC817-40LT1G NPN SOT-23 45V 500mA 225mW
MMBT3904-7-F NPN SOT-23 40V 200mA 310mW
MMBT5089 NPN SOT-23 25V 100mA 200mW
DN350T05-7 NPN SOT-23 350V 500mA 300mW
DNBT8105-7 NPN SOT-23 60V 1A 600mW
FMMT458TA NPN SOT-23 400V 225mA 500mW