MMBTH10-6AF Transistor Datasheet & Specifications

NPN SOT-23 General Purpose FOSAN
VCEO
25V
Ic Max
50mA
Pd Max
225mW
hFE Gain
200

Quick Reference

The MMBTH10-6AF is a NPN bipolar transistor in a SOT-23 package by FOSAN. This datasheet provides complete specifications including 25V breakdown voltage and 50mA continuous collector current. Download the MMBTH10-6AF datasheet PDF above for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufacturerFOSANOriginal Manufacturer
PackageSOT-23Physical mounting
Transistor TypeBJTBipolar Junction Transistor
VCEO25VBreakdown voltage
Ic50mACollector current
Pd225mWPower dissipation
DC Current Gain200hFE / Beta
Frequency650MHzTransition speed (fT)
VCEsat500mVSaturation voltage
Vebo3VEmitter-Base voltage
Cutoff Current100nALeakage (ICBO)
Temp-55โ„ƒ~+150โ„ƒOperating temp

Equivalent Transistors & Alternatives

PartTypePackageVCEOIcPd
MMBTA05(RANGE:100-400) NPN SOT-23 60V 500mA 300mW
ZXTN2020FTA NPN SOT-23 100V 4A 1.2W
FMMT491ATA NPN SOT-23 40V 1A 500mW
BC817-16LT1G NPN SOT-23 45V 500mA 225mW
BC817-40LT1G NPN SOT-23 45V 500mA 225mW
MMBT3904-7-F NPN SOT-23 40V 200mA 310mW
MMBT5089 NPN SOT-23 25V 100mA 200mW
DN350T05-7 NPN SOT-23 350V 500mA 300mW
DNBT8105-7 NPN SOT-23 60V 1A 600mW
FMMT458TA NPN SOT-23 400V 225mA 500mW