MMBT8050D(1.5A)-Y1 Transistor Datasheet & Specifications

NPN SOT-23 General Purpose ST(Semtech)
VCEO
25V
Ic Max
1.5A
Pd Max
200mW
hFE Gain
160

Quick Reference

The MMBT8050D(1.5A)-Y1 is a NPN bipolar transistor in a SOT-23 package by ST(Semtech). This datasheet provides complete specifications including 25V breakdown voltage and 1.5A continuous collector current. Download the MMBT8050D(1.5A)-Y1 datasheet PDF above for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufacturerST(Semtech)Original Manufacturer
PackageSOT-23Physical mounting
Transistor TypeBJTBipolar Junction Transistor
VCEO25VBreakdown voltage
Ic1.5ACollector current
Pd200mWPower dissipation
DC Current Gain160hFE / Beta
Frequency120MHzTransition speed (fT)
VCEsat500mVSaturation voltage
Vebo-Emitter-Base voltage
Cutoff Current100nALeakage (ICBO)
Temp-Operating temp

Equivalent Transistors & Alternatives

PartTypePackageVCEOIcPd
ZXTN2020FTA NPN SOT-23 100V 4A 1.2W
SS8050 NPN SOT-23 25V 1.5A 300mW
PBSS4350T,215 NPN SOT-23 50V 2A 300mW
NSS40201LT1G NPN SOT-23 40V 2A 460mW
PBSS4230T,215 NPN SOT-23 30V 2A 480mW
ZXTN25100DFHTA NPN SOT-23 100V 2.5A 1.25W
SS8050 NPN SOT-23 25V 1.5A 300mW
NSS1C201LT1G NPN SOT-23 100V 2A 710mW
FMMT619TA NPN SOT-23 50V 2A 625mW
DSS4240T-7 NPN SOT-23 40V 2A 730mW