MMBT5551 Transistor Datasheet & Specifications

NPN SOT-23 General Purpose amsem
VCEO
60V
Ic Max
600mA
Pd Max
300mW
hFE Gain
300

Quick Reference

The MMBT5551 is a NPN bipolar transistor in a SOT-23 package by amsem. This datasheet provides complete specifications including 60V breakdown voltage and 600mA continuous collector current. Download the MMBT5551 datasheet PDF above for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufactureramsemOriginal Manufacturer
PackageSOT-23Physical mounting
Transistor TypeBJTBipolar Junction Transistor
VCEO60VBreakdown voltage
Ic600mACollector current
Pd300mWPower dissipation
DC Current Gain300hFE / Beta
Frequency300MHzTransition speed (fT)
VCEsat200mVSaturation voltage
Vebo6VEmitter-Base voltage
Cutoff Current50nALeakage (ICBO)
Temp-55โ„ƒ~+150โ„ƒOperating temp

Equivalent Transistors & Alternatives

PartTypePackageVCEOIcPd
ZXTN2020FTA NPN SOT-23 100V 4A 1.2W
DNBT8105-7 NPN SOT-23 60V 1A 600mW
FMMT493ATA NPN SOT-23 60V 1A 500mW
MMBT5551 NPN SOT-23 160V 600mA 250mW
MMBT5551 NPN SOT-23 160V 600mA 300mW
FMMT491TA NPN SOT-23 60V 1A 500mW
ZXTN25100DFHTA NPN SOT-23 100V 2.5A 1.25W
NSS1C201LT1G NPN SOT-23 100V 2A 710mW
ZXTN2018FTA NPN SOT-23 60V 5A 1.56W
FMMT493TA NPN SOT-23 100V 1A 500mW