MMBT5089LT1G Transistor Datasheet & Specifications

NPN SOT-23 General Purpose onsemi
VCEO
25V
Ic Max
50mA
Pd Max
300mW
hFE Gain
400

Quick Reference

The MMBT5089LT1G is a NPN bipolar transistor in a SOT-23 package by onsemi. This datasheet provides complete specifications including 25V breakdown voltage and 50mA continuous collector current. Download the MMBT5089LT1G datasheet PDF above for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufactureronsemiOriginal Manufacturer
PackageSOT-23Physical mounting
Transistor TypeBJTBipolar Junction Transistor
VCEO25VBreakdown voltage
Ic50mACollector current
Pd300mWPower dissipation
DC Current Gain400hFE / Beta
Frequency50MHzTransition speed (fT)
VCEsat500mVSaturation voltage
Vebo4.5VEmitter-Base voltage
Cutoff Current50nALeakage (ICBO)
Temp-55โ„ƒ~+150โ„ƒOperating temp

Equivalent Transistors & Alternatives

PartTypePackageVCEOIcPd
MMBTA05(RANGE:100-400) NPN SOT-23 60V 500mA 300mW
ZXTN2020FTA NPN SOT-23 100V 4A 1.2W
FMMT491ATA NPN SOT-23 40V 1A 500mW
BC817-16LT1G NPN SOT-23 45V 500mA 225mW
BC817-40LT1G NPN SOT-23 45V 500mA 225mW
MMBT3904-7-F NPN SOT-23 40V 200mA 310mW
MMBT5089 NPN SOT-23 25V 100mA 200mW
DN350T05-7 NPN SOT-23 350V 500mA 300mW
DNBT8105-7 NPN SOT-23 60V 1A 600mW
FMMT458TA NPN SOT-23 400V 225mA 500mW