MMBT489LT1G Transistor Datasheet & Specifications

NPN SOT-23 General Purpose onsemi
VCEO
30V
Ic Max
1A
Pd Max
310mW
hFE Gain
300

Quick Reference

The MMBT489LT1G is a NPN bipolar transistor in a SOT-23 package by onsemi. This datasheet provides complete specifications including 30V breakdown voltage and 1A continuous collector current. Download the MMBT489LT1G datasheet PDF above for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufactureronsemiOriginal Manufacturer
PackageSOT-23Physical mounting
Transistor TypeBJTBipolar Junction Transistor
VCEO30VBreakdown voltage
Ic1ACollector current
Pd310mWPower dissipation
DC Current Gain300hFE / Beta
Frequency100MHzTransition speed (fT)
VCEsat-Saturation voltage
Vebo-Emitter-Base voltage
Cutoff Current-Leakage (ICBO)
Temp-55โ„ƒ~+150โ„ƒOperating temp

Equivalent Transistors & Alternatives

PartTypePackageVCEOIcPd
ZXTN2020FTA NPN SOT-23 100V 4A 1.2W
FMMT491ATA NPN SOT-23 40V 1A 500mW
DNBT8105-7 NPN SOT-23 60V 1A 600mW
ZXTN2040FTA NPN SOT-23 40V 1A 310mW
FMMT493ATA NPN SOT-23 60V 1A 500mW
PBSS4350T,215 NPN SOT-23 50V 2A 300mW
NSS40201LT1G NPN SOT-23 40V 2A 460mW
FMMT491TA NPN SOT-23 60V 1A 500mW
PBSS4230T,215 NPN SOT-23 30V 2A 480mW
ZXTN25100DFHTA NPN SOT-23 100V 2.5A 1.25W