MMBT3906T Transistor Datasheet & Specifications

PNP SOT-523 General Purpose R+O
VCEO
40V
Ic Max
200mA
Pd Max
150mW
hFE Gain
-

Quick Reference

The MMBT3906T is a PNP bipolar transistor in a SOT-523 package by R+O. This datasheet provides complete specifications including 40V breakdown voltage and 200mA continuous collector current. Download the MMBT3906T datasheet PDF above for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufacturerR+OOriginal Manufacturer
PackageSOT-523Physical mounting
Transistor TypeBJTBipolar Junction Transistor
VCEO40VBreakdown voltage
Ic200mACollector current
Pd150mWPower dissipation
DC Current Gain-hFE / Beta
Frequency250MHzTransition speed (fT)
VCEsat300@10mA,1VSaturation voltage
Vebo250mVEmitter-Base voltage
Cutoff Current100nALeakage (ICBO)
Temp-55โ„ƒ~+150โ„ƒ@(Tj)Operating temp

Equivalent Transistors & Alternatives

PartTypePackageVCEOIcPd
MMBT2907AT-7-F PNP SOT-523 60V 600mA 150mW
MMBT3906T PNP SOT-523 40V 200mA 150mW
MMBT5401T PNP SOT-523 150V 600mA 200mW
MMBT5401T PNP SOT-523 150V 600mA 200mW
MMBT3906T-MS PNP SOT-523 40V 200mA 150mW
CMUT2907A TR PBFREE PNP SOT-523 60V 1.2A 250mW
MMBT5401T PNP SOT-523 150V 600mA 200mW
MMBT3906T PNP SOT-523 40V 200mA 150mW
MMBT2907AT PNP SOT-523 60V 600mA 150mW
MMBT3906T PNP SOT-523 40V 200mA 150mW