MMBT3906T-MS Transistor Datasheet & Specifications

PNP SOT-523 General Purpose MSKSEMI
VCEO
40V
Ic Max
200mA
Pd Max
150mW
hFE Gain
100

Quick Reference

The MMBT3906T-MS is a PNP bipolar transistor in a SOT-523 package by MSKSEMI. This datasheet provides complete specifications including 40V breakdown voltage and 200mA continuous collector current. Download the MMBT3906T-MS datasheet PDF above for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufacturerMSKSEMIOriginal Manufacturer
PackageSOT-523Physical mounting
Transistor TypeBJTBipolar Junction Transistor
VCEO40VBreakdown voltage
Ic200mACollector current
Pd150mWPower dissipation
DC Current Gain100hFE / Beta
Frequency250MHzTransition speed (fT)
VCEsat400mVSaturation voltage
Vebo5VEmitter-Base voltage
Cutoff Current100nALeakage (ICBO)
Temp-55โ„ƒ~+150โ„ƒOperating temp

Equivalent Transistors & Alternatives

PartTypePackageVCEOIcPd
MMBT2907AT-7-F PNP SOT-523 60V 600mA 150mW
MMBT3906T PNP SOT-523 40V 200mA 150mW
MMBT5401T PNP SOT-523 150V 600mA 200mW
MMBT5401T PNP SOT-523 150V 600mA 200mW
CMUT2907A TR PBFREE PNP SOT-523 60V 1.2A 250mW
MMBT5401T PNP SOT-523 150V 600mA 200mW
MMBT3906T PNP SOT-523 40V 200mA 150mW
MMBT3906T PNP SOT-523 40V 200mA 150mW
MMBT2907AT PNP SOT-523 60V 600mA 150mW
MMBT3906T PNP SOT-523 40V 200mA 150mW