MMBT5401T Transistor Datasheet & Specifications
PNP
SOT-523
General Purpose
CBI
VCEO
150V
Ic Max
600mA
Pd Max
200mW
hFE Gain
60
Quick Reference
The MMBT5401T is a PNP bipolar transistor in a SOT-523 package by CBI. This datasheet provides complete specifications including 150V breakdown voltage and 600mA continuous collector current. Download the MMBT5401T datasheet PDF above for detailed pinout diagrams and application circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | CBI | Original Manufacturer |
| Package | SOT-523 | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| VCEO | 150V | Breakdown voltage |
| Ic | 600mA | Collector current |
| Pd | 200mW | Power dissipation |
| DC Current Gain | 60 | hFE / Beta |
| Frequency | 100MHz | Transition speed (fT) |
| VCEsat | 500mV | Saturation voltage |
| Vebo | 5V | Emitter-Base voltage |
| Cutoff Current | 50nA | Leakage (ICBO) |
| Temp | - | Operating temp |