MMBT3904Q Transistor Datasheet & Specifications

NPN SOT-23 General Purpose YANGJIE
VCEO
40V
Ic Max
200mA
Pd Max
300mW
hFE Gain
300

Quick Reference

The MMBT3904Q is a NPN bipolar transistor in a SOT-23 package by YANGJIE. This datasheet provides complete specifications including 40V breakdown voltage and 200mA continuous collector current. Download the MMBT3904Q datasheet PDF above for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufacturerYANGJIEOriginal Manufacturer
PackageSOT-23Physical mounting
Transistor TypeBJTBipolar Junction Transistor
VCEO40VBreakdown voltage
Ic200mACollector current
Pd300mWPower dissipation
DC Current Gain300hFE / Beta
Frequency-Transition speed (fT)
VCEsat300mVSaturation voltage
Vebo6VEmitter-Base voltage
Cutoff Current50nALeakage (ICBO)
Temp-55โ„ƒ~+150โ„ƒOperating temp

Equivalent Transistors & Alternatives

PartTypePackageVCEOIcPd
MMBTA05(RANGE:100-400) NPN SOT-23 60V 500mA 300mW
ZXTN2020FTA NPN SOT-23 100V 4A 1.2W
FMMT491ATA NPN SOT-23 40V 1A 500mW
BC817-16LT1G NPN SOT-23 45V 500mA 225mW
BC817-40LT1G NPN SOT-23 45V 500mA 225mW
MMBT3904-7-F NPN SOT-23 40V 200mA 310mW
DN350T05-7 NPN SOT-23 350V 500mA 300mW
DNBT8105-7 NPN SOT-23 60V 1A 600mW
FMMT458TA NPN SOT-23 400V 225mA 500mW
MMBTA42 NPN SOT-23 200V 500mA 350mW