MMBT2369ALT1G Transistor Datasheet & Specifications

NPN SOT-23 General Purpose onsemi
VCEO
15V
Ic Max
200mA
Pd Max
300mW
hFE Gain
120

Quick Reference

The MMBT2369ALT1G is a NPN bipolar transistor in a SOT-23 package by onsemi. This datasheet provides complete specifications including 15V breakdown voltage and 200mA continuous collector current. Download the MMBT2369ALT1G datasheet PDF above for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufactureronsemiOriginal Manufacturer
PackageSOT-23Physical mounting
Transistor TypeBJTBipolar Junction Transistor
VCEO15VBreakdown voltage
Ic200mACollector current
Pd300mWPower dissipation
DC Current Gain120hFE / Beta
Frequency-Transition speed (fT)
VCEsat500mVSaturation voltage
Vebo4.5VEmitter-Base voltage
Cutoff Current400nALeakage (ICBO)
Temp-55โ„ƒ~+150โ„ƒOperating temp

Equivalent Transistors & Alternatives

PartTypePackageVCEOIcPd
MMBTA05(RANGE:100-400) NPN SOT-23 60V 500mA 300mW
ZXTN2020FTA NPN SOT-23 100V 4A 1.2W
FMMT491ATA NPN SOT-23 40V 1A 500mW
BC817-16LT1G NPN SOT-23 45V 500mA 225mW
BC817-40LT1G NPN SOT-23 45V 500mA 225mW
MMBT3904-7-F NPN SOT-23 40V 200mA 310mW
DN350T05-7 NPN SOT-23 350V 500mA 300mW
DNBT8105-7 NPN SOT-23 60V 1A 600mW
FMMT458TA NPN SOT-23 400V 225mA 500mW
SS8050 NPN SOT-23 25V 1.5A 300mW