MMBT1616AG-G-AE3-R Transistor Datasheet & Specifications

NPN SOT-23 General Purpose UTC
VCEO
60V
Ic Max
1A
Pd Max
350mW
hFE Gain
200

Quick Reference

The MMBT1616AG-G-AE3-R is a NPN bipolar transistor in a SOT-23 package by UTC. This datasheet provides complete specifications including 60V breakdown voltage and 1A continuous collector current. Download the MMBT1616AG-G-AE3-R datasheet PDF above for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufacturerUTCOriginal Manufacturer
PackageSOT-23Physical mounting
Transistor TypeBJTBipolar Junction Transistor
VCEO60VBreakdown voltage
Ic1ACollector current
Pd350mWPower dissipation
DC Current Gain200hFE / Beta
Frequency160MHzTransition speed (fT)
VCEsat150mVSaturation voltage
Vebo6VEmitter-Base voltage
Cutoff Current100nALeakage (ICBO)
Temp-Operating temp

Equivalent Transistors & Alternatives

PartTypePackageVCEOIcPd
ZXTN2020FTA NPN SOT-23 100V 4A 1.2W
DNBT8105-7 NPN SOT-23 60V 1A 600mW
FMMT493ATA NPN SOT-23 60V 1A 500mW
FMMT491TA NPN SOT-23 60V 1A 500mW
ZXTN25100DFHTA NPN SOT-23 100V 2.5A 1.25W
NSS1C201LT1G NPN SOT-23 100V 2A 710mW
ZXTN2018FTA NPN SOT-23 60V 5A 1.56W
FMMT493TA NPN SOT-23 100V 1A 500mW
PBSS4160T,215 NPN SOT-23 60V 1A 1.25W
FMMT493 NPN SOT-23 100V 1A 500mW