MBT3904DW1T1G-CN Transistor Datasheet & Specifications

NPN SOT-363 General Purpose ChipNobo
VCEO
40V
Ic Max
200mA
Pd Max
200mW
hFE Gain
300

Quick Reference

The MBT3904DW1T1G-CN is a NPN bipolar transistor in a SOT-363 package by ChipNobo. This datasheet provides complete specifications including 40V breakdown voltage and 200mA continuous collector current. Download the MBT3904DW1T1G-CN datasheet PDF above for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufacturerChipNoboOriginal Manufacturer
PackageSOT-363Physical mounting
Transistor TypeBJTBipolar Junction Transistor
VCEO40VBreakdown voltage
Ic200mACollector current
Pd200mWPower dissipation
DC Current Gain300hFE / Beta
Frequency300MHzTransition speed (fT)
VCEsat300mVSaturation voltage
Vebo5VEmitter-Base voltage
Cutoff Current50nALeakage (ICBO)
Temp-Operating temp

Equivalent Transistors & Alternatives

PartTypePackageVCEOIcPd
MMDT5551(RANGE:100-300) NPN SOT-363 160V 200mA 200mW
DSS4240Y-7 NPN SOT-363 40V 2A 625mW
MMDT2222A NPN SOT-363 40V 600mA 200mW
MMDT5551 NPN SOT-363 160V 200mA 200mW
HMMDT39047F NPN SOT-363 40V 200mA 200mW
MMDT5551 NPN SOT-363 160V 200mA 200mW
TPMMDT4401 NPN SOT-363 40V 600mA 200mW
MMDT3904 NPN SOT-363 40V 200mA 200mW
MMDT3904 NPN SOT-363 40V 200mA 200mW
MMDT4401 NPN SOT-363 40V 600mA 200mW