H2SC3357-RE Transistor Datasheet & Specifications

NPN SOT-89 General Purpose HXY MOSFET
VCEO
12V
Ic Max
100mA
Pd Max
1.2W
hFE Gain
250

Quick Reference

The H2SC3357-RE is a NPN bipolar transistor in a SOT-89 package by HXY MOSFET. This datasheet provides complete specifications including 12V breakdown voltage and 100mA continuous collector current. Download the H2SC3357-RE datasheet PDF above for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufacturerHXY MOSFETOriginal Manufacturer
PackageSOT-89Physical mounting
Transistor TypeBJTBipolar Junction Transistor
VCEO12VBreakdown voltage
Ic100mACollector current
Pd1.2WPower dissipation
DC Current Gain250hFE / Beta
Frequency6.5GHzTransition speed (fT)
VCEsat400mVSaturation voltage
Vebo5VEmitter-Base voltage
Cutoff Current1uALeakage (ICBO)
Temp-55โ„ƒ~+150โ„ƒOperating temp

Equivalent Transistors & Alternatives

PartTypePackageVCEOIcPd
BCX56-16,115 NPN SOT-89 80V 1A 1.35W
2DD1664R-13 NPN SOT-89 32V 1A 1W
ZXTN2010ZTA NPN SOT-89 60V 5A 2.1W
2DD1664P-13 NPN SOT-89 32V 1A 1.5W
2DD1664Q-13 NPN SOT-89 32V 1A 1.5W
BCX56-16 NPN SOT-89 80V 1A 1.3W
ZXTN19055DZTA NPN SOT-89 55V 6A 2.1W
FCX690BTA NPN SOT-89 45V 2A 2W
BC868,115 NPN SOT-89 20V 2A 1.35W
2SC5824T100R NPN SOT-89 60V 3A 2W