DZT5551-13 Transistor Datasheet & Specifications

NPN SOT-223 General Purpose DIODES
VCEO
160V
Ic Max
600mA
Pd Max
2W
hFE Gain
80

Quick Reference

The DZT5551-13 is a NPN bipolar transistor in a SOT-223 package by DIODES. This datasheet provides complete specifications including 160V breakdown voltage and 600mA continuous collector current. Download the DZT5551-13 datasheet PDF above for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufacturerDIODESOriginal Manufacturer
PackageSOT-223Physical mounting
Transistor TypeBJTBipolar Junction Transistor
VCEO160VBreakdown voltage
Ic600mACollector current
Pd2WPower dissipation
DC Current Gain80hFE / Beta
Frequency300MHzTransition speed (fT)
VCEsat150mVSaturation voltage
Vebo-Emitter-Base voltage
Cutoff Current50nALeakage (ICBO)
Temp-55โ„ƒ~+150โ„ƒOperating temp

Equivalent Transistors & Alternatives

PartTypePackageVCEOIcPd
FZT857TA NPN SOT-223 300V 3.5A 3W
CZT5551 TR NPN SOT-223 160V 600mA 2W
ZXTN5551GTA NPN SOT-223 160V 600mA 2W
DXT13003DG-13 NPN SOT-223 450V 1.5A 3W
CZT5551 NPN SOT-223 160V 600mA 1W
PZT5551-TP NPN SOT-223 160V 600mA 1W
DZT5551Q-13 NPN SOT-223 160V 600mA 2W
CZT5551-JSM NPN SOT-223 160V 600mA 2W
CZT5551 NPN SOT-223 160V 600mA 1.5W
STN2580 NPN SOT-223 400V 1A 1.6W