DXT5401-13 Transistor Datasheet & Specifications
PNP
SOT-89
General Purpose
DIODES
VCEO
150V
Ic Max
600mA
Pd Max
1W
hFE Gain
60
Quick Reference
The DXT5401-13 is a PNP bipolar transistor in a SOT-89 package by DIODES. This datasheet provides complete specifications including 150V breakdown voltage and 600mA continuous collector current. Download the DXT5401-13 datasheet PDF above for detailed pinout diagrams and application circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | DIODES | Original Manufacturer |
| Package | SOT-89 | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| VCEO | 150V | Breakdown voltage |
| Ic | 600mA | Collector current |
| Pd | 1W | Power dissipation |
| DC Current Gain | 60 | hFE / Beta |
| Frequency | 100MHz | Transition speed (fT) |
| VCEsat | - | Saturation voltage |
| Vebo | - | Emitter-Base voltage |
| Cutoff Current | - | Leakage (ICBO) |
| Temp | -55℃~+150℃ | Operating temp |