DTC114YE-MS Transistor Datasheet & Specifications

NPN SOT-523 General Purpose MSKSEMI
VCEO
50V
Ic Max
100mA
Pd Max
150mW
hFE Gain
140

Quick Reference

The DTC114YE-MS is a NPN bipolar transistor in a SOT-523 package by MSKSEMI. This datasheet provides complete specifications including 50V breakdown voltage and 100mA continuous collector current. Download the DTC114YE-MS datasheet PDF above for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufacturerMSKSEMIOriginal Manufacturer
PackageSOT-523Physical mounting
Transistor TypeBJTBipolar Junction Transistor
VCEO50VBreakdown voltage
Ic100mACollector current
Pd150mWPower dissipation
DC Current Gain140hFE / Beta
Frequency-Transition speed (fT)
VCEsat-Saturation voltage
Vebo-Emitter-Base voltage
Cutoff Current100nALeakage (ICBO)
Temp-55โ„ƒ~+150โ„ƒOperating temp

Equivalent Transistors & Alternatives

PartTypePackageVCEOIcPd
2DC4617S-7-F NPN SOT-523 50V 150mA 150mW
2SC4617 NPN SOT-523 50V 150mA 150mW
HMMBT5551T NPN SOT-523 160V 600mA 300mW
2SC4617 NPN SOT-523 50V 150mA 150mW
MMBT5551T NPN SOT-523 160V 600mA 200mW
DTC114TE NPN SOT-523 50V 100mA 150mW
2SC4617R NPN SOT-523 50V 150mA 150mW
2SC4738 NPN SOT-523 50V 150mA 100mW