MMBT5551T Transistor Datasheet & Specifications
NPN
SOT-523
General Purpose
R+O
VCEO
160V
Ic Max
600mA
Pd Max
200mW
hFE Gain
-
Quick Reference
The MMBT5551T is a NPN bipolar transistor in a SOT-523 package by R+O. This datasheet provides complete specifications including 160V breakdown voltage and 600mA continuous collector current. Download the MMBT5551T datasheet PDF above for detailed pinout diagrams and application circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | R+O | Original Manufacturer |
| Package | SOT-523 | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| VCEO | 160V | Breakdown voltage |
| Ic | 600mA | Collector current |
| Pd | 200mW | Power dissipation |
| DC Current Gain | - | hFE / Beta |
| Frequency | 300MHz | Transition speed (fT) |
| VCEsat | 300@10mA,5V | Saturation voltage |
| Vebo | 150mV | Emitter-Base voltage |
| Cutoff Current | 50nA | Leakage (ICBO) |
| Temp | -55℃~+150℃@(Tj) | Operating temp |
Equivalent Transistors & Alternatives
| Part | Type | Package | VCEO | Ic | Pd |
|---|---|---|---|---|---|
| HMMBT5551T | NPN | SOT-523 | 160V | 600mA | 300mW |