DTC114TE Transistor Datasheet & Specifications

NPN SOT-523 General Purpose JSCJ
VCEO
50V
Ic Max
100mA
Pd Max
150mW
hFE Gain
100

Quick Reference

The DTC114TE is a NPN bipolar transistor in a SOT-523 package by JSCJ. This datasheet provides complete specifications including 50V breakdown voltage and 100mA continuous collector current. Download the DTC114TE datasheet PDF above for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufacturerJSCJOriginal Manufacturer
PackageSOT-523Physical mounting
Transistor TypeBJTBipolar Junction Transistor
VCEO50VBreakdown voltage
Ic100mACollector current
Pd150mWPower dissipation
DC Current Gain100hFE / Beta
Frequency250MHzTransition speed (fT)
VCEsat-Saturation voltage
Vebo-Emitter-Base voltage
Cutoff Current10kΩLeakage (ICBO)
Temp-55℃~+150℃Operating temp

Equivalent Transistors & Alternatives

PartTypePackageVCEOIcPd
2DC4617S-7-F NPN SOT-523 50V 150mA 150mW
2SC4617 NPN SOT-523 50V 150mA 150mW
HMMBT5551T NPN SOT-523 160V 600mA 300mW
2SC4617 NPN SOT-523 50V 150mA 150mW
MMBT5551T NPN SOT-523 160V 600mA 200mW
DTC114YE-MS NPN SOT-523 50V 100mA 150mW
2SC4617R NPN SOT-523 50V 150mA 150mW
2SC4738 NPN SOT-523 50V 150mA 100mW