D882SSG-P-AE3-R Transistor Datasheet & Specifications

NPN SOT-23 High Power UTC
VCEO
30V
Ic Max
3A
Pd Max
10W
hFE Gain
160

Quick Reference

The D882SSG-P-AE3-R is a NPN bipolar transistor in a SOT-23 package by UTC. This datasheet provides complete specifications including 30V breakdown voltage and 3A continuous collector current. Download the D882SSG-P-AE3-R datasheet PDF above for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufacturerUTCOriginal Manufacturer
PackageSOT-23Physical mounting
Transistor TypeBJTBipolar Junction Transistor
VCEO30VBreakdown voltage
Ic3ACollector current
Pd10WPower dissipation
DC Current Gain160hFE / Beta
Frequency80MHzTransition speed (fT)
VCEsat500mVSaturation voltage
Vebo5VEmitter-Base voltage
Cutoff Current1uALeakage (ICBO)
Temp-Operating temp

Equivalent Transistors & Alternatives

PartTypePackageVCEOIcPd
ZXTN2020FTA NPN SOT-23 100V 4A 1.2W
ZXTN2018FTA NPN SOT-23 60V 5A 1.56W
ZXTN25050DFHTA NPN SOT-23 50V 4A 1.25W
ZXTN25040DFHTA NPN SOT-23 40V 4A 1.25W
ZXTN2018FQTA NPN SOT-23 60V 5A 1W
D882S NPN SOT-23 30V 3A 1W
MMBT5550LT3G NPN SOT-23 140V 600nA 225mW
ZXTN2031FTA NPN SOT-23 50V 5A 1.2W
ZXTN25100BFHTA NPN SOT-23 100V 3A 1.25W