BSS63LT1G Transistor Datasheet & Specifications

PNP SOT-23 General Purpose onsemi
VCEO
100V
Ic Max
100mA
Pd Max
225mW
hFE Gain
30

Quick Reference

The BSS63LT1G is a PNP bipolar transistor in a SOT-23 package by onsemi. This datasheet provides complete specifications including 100V breakdown voltage and 100mA continuous collector current. Download the BSS63LT1G datasheet PDF above for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufactureronsemiOriginal Manufacturer
PackageSOT-23Physical mounting
Transistor TypeBJTBipolar Junction Transistor
VCEO100VBreakdown voltage
Ic100mACollector current
Pd225mWPower dissipation
DC Current Gain30hFE / Beta
Frequency95MHzTransition speed (fT)
VCEsat-Saturation voltage
Vebo-Emitter-Base voltage
Cutoff Current-Leakage (ICBO)
Temp-55โ„ƒ~+150โ„ƒOperating temp

Equivalent Transistors & Alternatives

PartTypePackageVCEOIcPd
FMMT560TA PNP SOT-23 500V 150mA 500mW
MMBTA92 PNP SOT-23 300V 500mA 300mW
ZXTP25100BFHTA PNP SOT-23 100V 2A 1.25W
FMMTA92TA PNP SOT-23 300V 200mA 310mW
MMBT5401 PNP SOT-23 150V 500mA 225mW
MMBT5401 PNP SOT-23 150V 600mA 300mW
MMBTA92 PNP SOT-23 300V 200mA 300mW
2SA1721-O(TE85L,F) PNP SOT-23 300V 100mA 150mW
PBHV9050T,215 PNP SOT-23 500V 150mA 300mW
NSVMMBT5401LT3G PNP SOT-23 150V 500mA 300mW