2SA1721-O(TE85L,F) Transistor Datasheet & Specifications

PNP SOT-23 General Purpose TOSHIBA
VCEO
300V
Ic Max
100mA
Pd Max
150mW
hFE Gain
30

Quick Reference

The 2SA1721-O(TE85L,F) is a PNP bipolar transistor in a SOT-23 package by TOSHIBA. This datasheet provides complete specifications including 300V breakdown voltage and 100mA continuous collector current. Download the 2SA1721-O(TE85L,F) datasheet PDF above for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufacturerTOSHIBAOriginal Manufacturer
PackageSOT-23Physical mounting
Transistor TypeBJTBipolar Junction Transistor
VCEO300VBreakdown voltage
Ic100mACollector current
Pd150mWPower dissipation
DC Current Gain30hFE / Beta
Frequency55MHzTransition speed (fT)
VCEsat500mVSaturation voltage
Vebo5VEmitter-Base voltage
Cutoff Current100nALeakage (ICBO)
Temp-55โ„ƒ~+150โ„ƒOperating temp

Equivalent Transistors & Alternatives

PartTypePackageVCEOIcPd
FMMT560TA PNP SOT-23 500V 150mA 500mW
MMBTA92 PNP SOT-23 300V 500mA 300mW
FMMTA92TA PNP SOT-23 300V 200mA 310mW
MMBTA92 PNP SOT-23 300V 200mA 300mW
PBHV9050T,215 PNP SOT-23 500V 150mA 300mW
MMBTA92(RANGE:100-200) PNP SOT-23 300V 200mA 300mW
MMBTA92-7-F PNP SOT-23 300V 500mA 300mW
MMBTA94 PNP SOT-23 400V 200mA 350mW
MMBTA94 PNP SOT-23 400V 200mA 350mW
FMMT558TA PNP SOT-23 400V 150mA 500mW